STGW30NC60VD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Height :

21.07mm

Number of Elements :

1

Gate-Emitter Thr Voltage-Max :

5.75V

Factory Lead Time :

8 Weeks

Current - Collector Pulsed (Icm) :

150A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

ECCN Code :

EAR99

Switching Energy :

220μJ (on), 330μJ (off)

Transistor Application :

POWER CONTROL

Width :

5.15mm

Turn Off Time-Nom (toff) :

280 ns

Length :

16.02mm

Radiation Hardening :

No

Number of Pins :

3

Base Part Number :

STGW30

Packaging :

Tube

Gate-Emitter Voltage-Max :

20V

Max Power Dissipation :

250W

Mounting Type :

Through Hole

Pin Count :

3

Series :

PowerMESH™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

100nC

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Saturation Voltage :

2.5V

Polarity/Channel Type :

N-Channel

Package / Case :

TO-247-3

Rise Time :

11ns

Td (on/off) @ 25°C :

31ns/100ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

250W

Max Collector Current :

80A

Mount :

Through Hole

Element Configuration :

Single

Reverse Recovery Time :

44ns

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

42.5 ns

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

600V

Transistor Element Material :

SILICON

Test Condition :

390V, 20A, 3.3 Ω, 15V