STGW30M65DF2

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Mfr.Part #
STGW30M65DF2
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
TRENCH GATE FIELD-STOP IGBT M SE
Stock
241
In Stock :
241

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge :
80nC
Reverse Recovery Time :
140 ns
Collector Emitter Breakdown Voltage :
650V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Switching Energy :
300μJ (on), 960μJ (off)
RoHS Status :
ROHS3 Compliant
IGBT Type :
Trench Field Stop
Collector Emitter Voltage (VCEO) :
2V
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~175°C TJ
Power - Max :
258W
Current - Collector Pulsed (Icm) :
120A
ECCN Code :
EAR99
Factory Lead Time :
30 Weeks
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 30A
Package / Case :
TO-247-3
Max Power Dissipation :
258W
Base Part Number :
STGW30
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Mount :
Through Hole
Test Condition :
400V, 30A, 10 Ω, 15V
Input Type :
Standard
Td (on/off) @ 25°C :
31.6ns/115ns
Packaging :
Tube
Max Collector Current :
60A
Datasheets
STGW30M65DF2
Introducing Transistors - IGBTs - Single STMicroelectronics STGW30M65DF2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, Base Part Number:STGW30, STGW30M65DF2 pinout, STGW30M65DF2 datasheet PDF, STGW30M65DF2 amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW30M65DF2 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW30M65DF2


STGW30M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW30M65DF2                   Description


These devices are IGBTs developed using an   advanced proprietary trench gate field-stop   structure. The devices are part of the M series   IGBTs, which represent an optimal balance   between inverter system performance and   efficiency where low-loss and short-circuit   functionality are essential. Furthermore, the   positive VCE(sat) temperature coefficient and tight   parameter distribution result in safer paralleling   operation.

 


STGW30M65DF2                   Features


· 6 μs of minimum short-circuit withstand time

· VCE(sat) = 1.55 V (typ.) @ IC = 30 A

· Tight parameters distribution

· Safer paralleling

· Low thermal resistance

· Soft and very fast recovery antiparallel diode


STGW30M65DF2                    Applications


· Motor control

· UPS

· PFC



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