STBV45G-AP
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- Mfr.Part #
- STBV45G-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.75A TO92AP
- Stock
- 5,867
- In Stock ：
- 5,867
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Collector Current :
- 750mA
- Pin Count :
- 3
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 400V
- Packaging :
- Tape and Box (TB)
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 250μA
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 400mA 5V
- Power - Max :
- 950mW
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Breakdown Voltage :
- 400V
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- O-PBCY-T3
- Max Power Dissipation :
- 950mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 135mA, 400mA
- Transistor Application :
- SWITCHING
- Base Part Number :
- STBV45
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Datasheets
- STBV45G-AP
,TO-226_straightlead.jpg)
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STBV45G-AP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 400mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 135mA, 400mA.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 750mA volts at its maximum.
STBV45G-AP Features
the DC current gain for this device is 5 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 135mA, 400mA
the emitter base voltage is kept at 9V
STBV45G-AP Applications
There are a lot of STMicroelectronics
STBV45G-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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