STBV32G-AP
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- Mfr.Part #
- STBV32G-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO92AP
- Stock
- 842
- In Stock ：
- 842
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 1.5A
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 1A 2V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 1.5A
- Power - Max :
- 1.5W
- Packaging :
- Tape and Box (TB)
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Max Breakdown Voltage :
- 400V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 400V
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 9V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Base Part Number :
- STBV32
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1mA
- Pin Count :
- 3
- Max Power Dissipation :
- 1.5W
- Datasheets
- STBV32G-AP
,TO-226_straightlead.jpg)
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STBV32G-AP Overview
In this device, the DC current gain is 5 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500mA, 1.5A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
STBV32G-AP Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
STBV32G-AP Applications
There are a lot of STMicroelectronics
STBV32G-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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