STBV45-AP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Operating Temperature :

150°C TJ

Polarity/Channel Type :

NPN

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 400mA 5V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

10

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 135mA, 400mA

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

400mV

HTS Code :

8541.21.00.95

Collector Emitter Breakdown Voltage :

400V

Terminal Position :

BOTTOM

Base Part Number :

STBV45

Number of Elements :

1

Max Power Dissipation :

950mW

Collector Emitter Voltage (VCEO) :

400V

Mount :

Through Hole

Transistor Type :

NPN

Number of Terminations :

3

Collector Base Voltage (VCBO) :

9V

Power - Max :

950mW

Packaging :

Tape and Box (TB)

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

250μA

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pin Count :

3

Max Breakdown Voltage :

400V

Max Collector Current :

750mA

Emitter Base Voltage (VEBO) :

9V

ECCN Code :

EAR99