STBV42-AP
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- Mfr.Part #
- STBV42-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO92AP
- Stock
- 356
- In Stock ：
- 356
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 1W
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 400mA 5V
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 400V
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 9V
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- hFE Min :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 400mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 750mA
- Collector Emitter Voltage (VCEO) :
- 400V
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1mA
- Base Part Number :
- STBV42
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 400V
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- NPN
- Datasheets
- STBV42-AP
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STBV42-AP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 400mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 250mA, 750mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1A volts.
STBV42-AP Features
the DC current gain for this device is 10 @ 400mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.5V @ 250mA, 750mA
the emitter base voltage is kept at 9V
STBV42-AP Applications
There are a lot of STMicroelectronics
STBV42-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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