STBV42G
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- Mfr.Part #
- STBV42G
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO92-3
- Stock
- 24,497
- In Stock ：
- 24,497
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- STBV42
- Current - Collector Cutoff (Max) :
- 1mA
- JESD-30 Code :
- O-PBCY-T3
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Power - Max :
- 1W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 1A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 400mA 5V
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 9V
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 750mA
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Pin Count :
- 3
- Datasheets
- STBV42G
,TO-226_straightlead.jpg)
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
STBV42G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 400mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 250mA, 750mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.During maximum operation, collector current can be as low as 1A volts.
STBV42G Features
the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA
the emitter base voltage is kept at 9V
STBV42G Applications
There are a lot of STMicroelectronics
STBV42G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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