STBV42
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- Mfr.Part #
- STBV42
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO92-3
- Stock
- 2,093
- In Stock ：
- 2,093
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 1A
- Collector Emitter Saturation Voltage :
- 400mV
- Base Part Number :
- STBV42
- Length :
- 4.95mm
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- hFE Min :
- 10
- Pin Count :
- 3
- Number of Elements :
- 1
- Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 700V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 400mA 5V
- Current - Collector Cutoff (Max) :
- 1mA
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 400V
- Max Power Dissipation :
- 1W
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Width :
- 3.94mm
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 400V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 750mA
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Emitter Base Voltage (VEBO) :
- 9V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 400V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Height :
- 4.95mm
- Number of Terminations :
- 3
- Datasheets
- STBV42
,TO-226_straightlead.jpg)
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
STBV42 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 400mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 250mA, 750mA.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
STBV42 Features
the DC current gain for this device is 10 @ 400mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.5V @ 250mA, 750mA
the emitter base voltage is kept at 9V
the current rating of this device is 1A
STBV42 Applications
There are a lot of STMicroelectronics
STBV42 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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