STBV32G
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- Mfr.Part #
- STBV32G
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO92-3
- Stock
- 7,827
- In Stock ：
- 7,827
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.5W
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 9V
- Base Part Number :
- STBV32
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 1A 2V
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 20
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 1.5A
- Max Collector Current :
- 1.5A
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 1.5W
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- JESD-30 Code :
- O-PBCY-T3
- Collector Emitter Breakdown Voltage :
- 400V
- Continuous Collector Current :
- 1.5A
- Transistor Element Material :
- SILICON
- Datasheets
- STBV32G
,TO-226_straightlead.jpg)
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
STBV32G Overview
This device has a DC current gain of 5 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1.5A is necessary for high efficiency.The base voltage of the emitter can be kept at 9V to achieve high efficiency.The maximum collector current is 1.5A volts.
STBV32G Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
STBV32G Applications
There are a lot of STMicroelectronics
STBV32G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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