STBV42G-AP
- Mfr.Part #
- STBV42G-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO92AP
- Stock
- 34,076
- In Stock :
- 34,076
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 400V
- Max Collector Current :
- 1A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 400mA 5V
- Number of Terminations :
- 3
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 9V
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Power - Max :
- 1W
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1mA
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 750mA
- Base Part Number :
- STBV42
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 400V
- Collector Emitter Breakdown Voltage :
- 400V
- Datasheets
- STBV42G-AP

NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STBV42G-AP Overview
This device has a DC current gain of 10 @ 400mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 250mA, 750mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A breakdown input voltage of 400V volts can be used.A maximum collector current of 1A volts is possible.
STBV42G-AP Features
the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA
the emitter base voltage is kept at 9V
STBV42G-AP Applications
There are a lot of STMicroelectronics
STBV42G-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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