STB7NK80Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 2.6A, 10V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

20 ns

Pulsed Drain Current-Max (IDM) :

20.8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

125W Tc

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

STB7N

Input Capacitance (Ciss) (Max) @ Vds :

1138pF @ 25V

Radiation Hardening :

No

Continuous Drain Current (ID) :

5.2A

FET Type :

N-Channel

Packaging :

Tube

Number of Pins :

3

Number of Terminations :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

45 ns

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Mount :

Through Hole

Fall Time (Typ) :

20 ns

Rise Time :

12ns

Additional Feature :

AVALANCHE RATED

Power Dissipation :

125W

Series :

SuperMESH™

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

800V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5.2A Tc

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Element Configuration :

Single

Pin Count :

3

Vgs (Max) :

±30V