STB75N20
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- Mfr.Part #
- STB75N20
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 75A D2PAK
- Stock
- 801
- In Stock ：
- 801
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 29 ns
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Current Rating :
- 75A
- Avalanche Energy Rating (Eas) :
- 205 mJ
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 37A, 10V
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 200V
- Voltage - Rated DC :
- 200V
- Series :
- STripFET™
- Rise Time :
- 33ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3260pF @ 25V
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Turn On Delay Time :
- 53 ns
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 75A
- Power Dissipation-Max :
- 190W Tc
- Turn-Off Delay Time :
- 75 ns
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Pin Count :
- 3
- Operating Temperature :
- -50°C~150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Power Dissipation :
- 190W
- Base Part Number :
- STB75N
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- STB75N20
N-Channel Tape & Reel (TR) 34m Ω @ 37A, 10V ±20V 3260pF @ 25V 84nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB75N20 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 205 mJ.A device's maximum input capacitance is 3260pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 53 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB75N20 Features
the avalanche energy rating (Eas) is 205 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
STB75N20 Applications
There are a lot of STMicroelectronics
STB75N20 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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