STB76NF75
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- Mfr.Part #
- STB76NF75
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 80A D2PAK
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 300W Tc
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 30 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Pin Count :
- 4
- Factory Lead Time :
- 12 Weeks
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Rise Time :
- 100ns
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- 245
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.011Ohm
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 75V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Radiation Hardening :
- No
- Series :
- STripFET™ II
- Base Part Number :
- STB76N
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 40A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 80A
- Turn On Delay Time :
- 25 ns
- Number of Elements :
- 1
- Power Dissipation :
- 300W
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Turn-Off Delay Time :
- 66 ns
- Datasheets
- STB76NF75
N-Channel Tape & Reel (TR) 11m Ω @ 40A, 10V ±20V 3700pF @ 25V 160nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB76NF75 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 700 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 75V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 75V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 66 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STB76NF75 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 66 ns
STB76NF75 Applications
There are a lot of STMicroelectronics
STB76NF75 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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