STB70NFS03LT4
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- Mfr.Part #
- STB70NFS03LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 70A D2PAK
- Stock
- 45,920
- In Stock ：
- 45,920
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1440pF @ 25V
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 70A
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Fall Time (Typ) :
- 25 ns
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 30V
- Rds On (Max) @ Id, Vgs :
- 9.5m Ω @ 35A, 10V
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0095Ohm
- Drain to Source Breakdown Voltage :
- 30V
- Current Rating :
- 70A
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Power Dissipation :
- 100W
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Series :
- STripFET™
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 100W Tc
- Base Part Number :
- STB70N
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Rise Time :
- 165ns
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 21 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 5V
- Pulsed Drain Current-Max (IDM) :
- 280A
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 18V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Vgs (Max) :
- ±18V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Lead Free
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- 245
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Datasheets
- STB70NFS03LT4
N-Channel Tape & Reel (TR) 9.5m Ω @ 35A, 10V ±18V 1440pF @ 25V 30nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB70NFS03LT4 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1440pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 70A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.Peak drain current is 280A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 18V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
STB70NFS03LT4 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 280A.
STB70NFS03LT4 Applications
There are a lot of STMicroelectronics
STB70NFS03LT4 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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