STB7ANM60N
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- Mfr.Part #
- STB7ANM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A D2PAK
- Stock
- 6,328
- In Stock ：
- 6,328
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 45W Tc
- Factory Lead Time :
- 26 Weeks
- Drain to Source Breakdown Voltage :
- 600V
- Vgs (Max) :
- ±25V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Rise Time :
- 10ns
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Turn-Off Delay Time :
- 26 ns
- Radiation Hardening :
- No
- Height :
- 2.4mm
- Width :
- 6.2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Series :
- Automotive, AEC-Q101, MDmesh™ II
- Continuous Drain Current (ID) :
- 5A
- Number of Channels :
- 1
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250mA
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 2.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 363pF @ 50V
- FET Type :
- N-Channel
- Base Part Number :
- STB7AN
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 25V
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 12 ns
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.6mm
- Turn On Delay Time :
- 7 ns
- Datasheets
- STB7ANM60N
N-Channel Tape & Reel (TR) 900m Ω @ 2.5A, 10V ±25V 363pF @ 50V 14nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB7ANM60N Overview
A device's maximum input capacitance is 363pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 26 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB7ANM60N Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 26 ns
STB7ANM60N Applications
There are a lot of STMicroelectronics
STB7ANM60N applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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