STB75NF75LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

245

ECCN Code :

EAR99

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

110 ns

Voltage - Rated DC :

75V

Current Rating :

75A

Case Connection :

DRAIN

Additional Feature :

LOW THRESHOLD

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

35 ns

Transistor Application :

SWITCHING

Height :

4.6mm

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

11m Ω @ 37.5A, 10V

Number of Pins :

3

Power Dissipation :

300W

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 25V

Element Configuration :

Single

Power Dissipation-Max :

300W Tc

Rise Time :

155ns

Threshold Voltage :

2.5V

Gate to Source Voltage (Vgs) :

15V

Number of Terminations :

2

Series :

STripFET™ II

Fall Time (Typ) :

60 ns

Resistance :

11mOhm

Terminal Finish :

Matte Tin (Sn) - annealed

Terminal Form :

Gull wing

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 5V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Length :

10.4mm

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Continuous Drain Current (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Elements :

1

Drain to Source Breakdown Voltage :

75V

Vgs (Max) :

±15V

Base Part Number :

STB75N

Width :

9.35mm

Mount :

Surface Mount

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

680 mJ