STB76NF80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Base Part Number :

STB76N

Transistor Application :

SWITCHING

Resistance :

9.5MOhm

Turn-Off Delay Time :

66 ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

700 mJ

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Continuous Drain Current (ID) :

80A

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

80V

Radiation Hardening :

No

Packaging :

Cut Tape (CT)

Fall Time (Typ) :

30 ns

Nominal Vgs :

3 V

Pin Count :

4

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Rise Time :

100ns

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Power Dissipation-Max :

300W Tc

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Series :

STripFET™ II

Threshold Voltage :

3V

Power Dissipation :

300W