STB75NH02LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

24V

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Turn On Delay Time :

12 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Pin Count :

3

Transistor Application :

SWITCHING

Number of Terminations :

2

Drain-source On Resistance-Max :

0.014Ohm

JESD-30 Code :

R-PSSO-G2

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 15V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

80W Tc

Element Configuration :

Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain to Source Breakdown Voltage :

24V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Packaging :

Cut Tape (CT)

Turn-Off Delay Time :

18 ns

Series :

STripFET™ III

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

240A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

60A

Power Dissipation :

80W

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Mount :

Surface Mount

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

200ns

Base Part Number :

STB75N

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Current Rating :

75A

Number of Elements :

1

JESD-609 Code :

e3

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

245

Fall Time (Typ) :

25 ns

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V