STB70N10F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Peak Reflow Temperature (Cel) :

245

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Continuous Drain Current (ID) :

65A

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 30A, 10V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - annealed

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

120 mJ

Base Part Number :

STB70N

Terminal Position :

Single

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

150W Tc

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Series :

DeepGATE™, STripFET™

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

260A

Drain-source On Resistance-Max :

0.0195ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Pin Count :

4

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)