STB75NF75T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Turn-Off Delay Time :

66 ns

Case Connection :

DRAIN

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

75V

Base Part Number :

STB75N

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

75A

Number of Terminations :

2

Transistor Application :

SWITCHING

Power Dissipation :

300W

Power Dissipation-Max :

300W Tc

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

245

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Rise Time :

100ns

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Series :

STripFET™ II

Fall Time (Typ) :

30 ns

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Resistance :

11mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

700 mJ

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

FET Type :

N-Channel

Turn On Delay Time :

25 ns

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

80A

Radiation Hardening :

No

Pin Count :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Continuous Drain (Id) @ 25°C :

80A Tc