STB7N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

6A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

STB7N

Fall Time (Typ) :

19 ns

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

737pF @ 100V

FET Type :

N-Channel

Rise Time :

11ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

245

Terminal Finish :

Matte Tin (Sn) - annealed

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

980m Ω @ 3.1A, 10V

Number of Pins :

3

Number of Terminations :

2

Drain to Source Breakdown Voltage :

525V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

25A

Series :

SuperMESH3™

Turn-Off Delay Time :

36 ns

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Pin Count :

4

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Power Dissipation-Max :

90W Tc

Drain Current-Max (Abs) (ID) :

6.2A

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Resistance :

850mOhm

Mounting Type :

Surface Mount

Turn On Delay Time :

13 ns

Radiation Hardening :

No

Terminal Form :

Gull wing

Lead Free :

Lead Free

Vgs (Max) :

±30V

Power Dissipation :

90W

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE