SS9018GBU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Max Power Dissipation :

400mW

ECCN Code :

EAR99

Packaging :

Bulk

Published :

2002

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

30V

Number of Pins :

3

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Mount :

Through Hole

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

30V

Transition Frequency :

1100MHz

Continuous Collector Current :

50mA

Current Rating :

50mA

Power Dissipation :

400mW

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Weight :

179mg

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

72 @ 1mA 5V

Emitter Base Voltage (VEBO) :

5V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Element Material :

SILICON

Max Collector Current :

50mA

hFE Min :

28

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

15V

Collector Emitter Breakdown Voltage :

15V

Element Configuration :

Single

Radiation Hardening :

No

Frequency :

1.1GHz