SS9012GBU
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- Mfr.Part #
- SS9012GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.5A TO92-3
- Stock
- 12,908
- In Stock ：
- 12,908
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 112 @ 50mA 1V
- Collector Emitter Breakdown Voltage :
- 20V
- Length :
- 4.58mm
- hFE Min :
- 64
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- -40V
- Weight :
- 179mg
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Terminations :
- 3
- Max Power Dissipation :
- 625mW
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- Current Rating :
- -500mA
- ECCN Code :
- EAR99
- Base Part Number :
- SS9012
- Width :
- 3.86mm
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -180mV
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Published :
- 2002
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 500mA
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Height :
- 4.58mm
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 20V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -20V
- Radiation Hardening :
- No
- Datasheets
- SS9012GBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS9012GBU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 112 @ 50mA 1V.The collector emitter saturation voltage is -180mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.A maximum collector current of 500mA volts can be achieved.
SS9012GBU Features
the DC current gain for this device is 112 @ 50mA 1V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
SS9012GBU Applications
There are a lot of ON Semiconductor
SS9012GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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