SS9012GTA-ON
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- Mfr.Part #
- SS9012GTA-ON
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.5A TO92-3
- Stock
- 20,153
- In Stock ：
- 20,153
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 20 V
- Current - Collector (Ic) (Max) :
- 500 mA
- Package :
- Bulk
- Supplier Device Package :
- TO-92-3
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 112 @ 50mA, 1V
- Frequency - Transition :
- -
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Series :
- -
- Product Status :
- Active
- Power - Max :
- 625 mW
- Datasheets
- SS9012GTA-ON
PNP 150°C (TJ) 100nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
SS9012GTA-ON Overview
This device has a DC current gain of 112 @ 50mA, 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Product package TO-92-3 comes from the supplier.Collector Emitter Breakdown occurs at 20 VV - Maximum voltage.
SS9012GTA-ON Features
the DC current gain for this device is 112 @ 50mA, 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
the supplier device package of TO-92-3
SS9012GTA-ON Applications
There are a lot of onsemi
SS9012GTA-ON applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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