SS9011HBU

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Mfr.Part #
SS9011HBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 30V 0.03A TO92-3
Stock
18,535
In Stock :
18,535

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Reach Compliance Code :
Unknown
RoHS Status :
ROHS3 Compliant
Frequency - Transition :
2MHz
JESD-30 Code :
O-PBCY-T3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material :
SILICON
Power - Max :
400mW
Transition Frequency :
2MHz
Terminal Finish :
MATTE TIN
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Qualification Status :
COMMERCIAL
Current - Collector (Ic) (Max) :
30mA
Polarity/Channel Type :
NPN
Terminal Position :
BOTTOM
Configuration :
Single
Number of Elements :
1
Voltage - Collector Emitter Breakdown (Max) :
30V
Packaging :
Bulk
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 1mA, 10mA
Transistor Type :
NPN
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
Not Applicable
Number of Terminations :
3
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
97 @ 1mA 5V
Surface Mount :
No
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Application :
AMPLIFIER
Operating Temperature :
150°C TJ
Datasheets
SS9011HBU
Introducing Transistors - Bipolar (BJT) - Single onsemi SS9011HBU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, SS9011HBU pinout, SS9011HBU datasheet PDF, SS9011HBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SS9011HBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SS9011HBU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

SS9011HBU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 97 @ 1mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.The part has a transition frequency of 2MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).

SS9011HBU Features


the DC current gain for this device is 97 @ 1mA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
a transition frequency of 2MHz


SS9011HBU Applications


There are a lot of Rochester Electronics, LLC
SS9011HBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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