SS9011HBU
- Mfr.Part #
- SS9011HBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.03A TO92-3
- Stock
- 18,535
- In Stock :
- 18,535
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 2MHz
- JESD-30 Code :
- O-PBCY-T3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Element Material :
- SILICON
- Power - Max :
- 400mW
- Transition Frequency :
- 2MHz
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Qualification Status :
- COMMERCIAL
- Current - Collector (Ic) (Max) :
- 30mA
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 97 @ 1mA 5V
- Surface Mount :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- 150°C TJ
- Datasheets
- SS9011HBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS9011HBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 97 @ 1mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.The part has a transition frequency of 2MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
SS9011HBU Features
the DC current gain for this device is 97 @ 1mA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
a transition frequency of 2MHz
SS9011HBU Applications
There are a lot of Rochester Electronics, LLC
SS9011HBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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