SP8M24FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.064Ohm

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

18A

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

45V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 10V 1700pF @ 10V

Published :

2017

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Series :

Automotive, AEC-Q101

JESD-30 Code :

R-PDSO-G8

FET Feature :

Standard

ECCN Code :

EAR99

Power - Max :

2W

Factory Lead Time :

20 Weeks

FET Type :

N and P-Channel

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta 3.5A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 5V, 18.2nC @ 5V

Drain Current-Max (Abs) (ID) :

4.5A

DS Breakdown Voltage-Min :

45V

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

46m Ω @ 4.5A, 10V, 63m Ω @ 3.5A, 10V

Terminal Position :

Dual