SP8M10TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

7A 4.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

2W

FET Feature :

Logic Level Gate

Terminal Finish :

TIN COPPER

Transistor Element Material :

SILICON

Current Rating :

7A

Number of Pins :

8

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Pin Count :

8

Terminal Position :

Dual

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 10V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e2

Drain-source On Resistance-Max :

0.037Ohm

Base Part Number :

*M10

Number of Elements :

2

Continuous Drain Current (ID) :

4.5A

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V

Drain Current-Max (Abs) (ID) :

7A

FET Type :

N and P-Channel

Rise Time :

25ns