SP8M10FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

FET Feature :

Logic Level Gate, 4V Drive

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 10V, 56m Ω @ 4.5A, 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

600pF 850pF @ 10V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Power - Max :

2W Ta

Terminal Position :

Dual

Surface Mount :

yes

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Terminations :

8

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

7A

Pulsed Drain Current-Max (IDM) :

28A

Drain-source On Resistance-Max :

0.037Ohm

JESD-30 Code :

R-PDSO-G8

Operating Temperature :

150°C

Series :

Automotive, AEC-Q101

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

8.4nC, 8.5nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

7A Ta 4.5A Ta

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)