SP8M21FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Cut Tape (CT)

Max Power Dissipation :

2W

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Threshold Voltage :

2.5V

Published :

2017

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

45V

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

45V

Current - Continuous Drain (Id) @ 25°C :

6A Ta 4A Ta

Continuous Drain Current (ID) :

6A

Number of Pins :

8

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

6A

Series :

Automotive, AEC-Q101

Transistor Application :

SWITCHING

FET Type :

N and P-Channel

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

24A

Drain-source On Resistance-Max :

0.037Ohm

Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V 2400pF @ 10V

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

25m Ω @ 6A, 10V, 46m Ω @ 4A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Standard

Factory Lead Time :

20 Weeks

Gate Charge (Qg) (Max) @ Vgs :

21.6nC @ 5V, 28nC @ 5V