SISA26DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Number of Channels :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

2.65m Ω @ 15A, 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

3.6W

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Series :

TrenchFET® Gen IV

Input Capacitance (Ciss) (Max) @ Vds :

2247pF @ 10V

FET Type :

N-Channel

Turn-Off Delay Time :

16 ns

Vgs (Max) :

+16V, -12V

Height :

1.17mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

39W Tc

Turn On Delay Time :

9 ns

Package / Case :

PowerPAK® 1212-8S

Continuous Drain Current (ID) :

29.1A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

25V

Max Junction Temperature (Tj) :

150°C