SISA12ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 10A, 10V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Position :

Dual

Factory Lead Time :

14 Weeks

Package / Case :

PowerPAK® 1212-8

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.2V @ 250µA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 15V

JESD-30 Code :

S-PDSO-C5

Power Dissipation :

3.5W

Number of Pins :

8

Radiation Hardening :

No

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Published :

2013

Mount :

Surface Mount

DS Breakdown Voltage-Min :

30V

Threshold Voltage :

1.1V

Transistor Application :

SWITCHING

REACH SVHC :

Unknown

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

C BEND

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Vgs (Max) :

+20V, -16V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3.5W Ta 28W Tc

Drain-source On Resistance-Max :

0.0043Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

25A