SISA10BDN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Cut Tape

Transistor Polarity :

N-Channel

Pin Count :

8

FET Feature :

-

Mounting Style :

SMD/SMT

Continuous Drain Current Id :

104A

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

26A (Ta), 104A (Tc)

Package Type :

PowerPAK 1212-8PT

RoHS :

Details

Rds On (Max) @ Id, Vgs :

3.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

36.2 nC @ 10 V

Brand :

Vishay / Siliconix

Channel Type :

N

Configuration :

Single

Product Status :

Active

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Manufacturer :

Vishay

Input Capacitance (Ciss) (Max) @ Vds :

1710 pF @ 15 V

Channel Mode :

Enhancement

MSL :

MSL 1 - Unlimited

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Surface Mount

Rise Time :

20 ns, 35 ns

Qualification :

-

Vgs (Max) :

+20V, -16V

Supplier Device Package :

PowerPAK? 1212-8

Package / Case :

PowerPAK? 1212-8

Number of Elements per Chip :

1

Power Dissipation (Max) :

3.8W (Ta), 63W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Series :

TrenchFET? Gen IV

Power Dissipation :

63W

Drain to Source Voltage (Vdss) :

30 V

Package :

Digi-Reel?

FET Type :

N-Channel

Subcategory :

MOSFETs