SISA04DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Threshold Voltage :

1.1V

Lead Free :

Lead Free

JESD-30 Code :

S-PDSO-C5

Package / Case :

PowerPAK® 1212-8

Number of Channels :

1

Number of Pins :

8

Power Dissipation :

3.7W

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Length :

3.1496mm

Element Configuration :

Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Height :

1.0668mm

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2012

Series :

TrenchFET®

Resistance :

2.15MOhm

Rds On (Max) @ Id, Vgs :

2.15m Ω @ 15A, 10V

Factory Lead Time :

14 Weeks

Terminal Form :

C BEND

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Turn-Off Delay Time :

30 ns

Radiation Hardening :

No

Width :

3.1496mm

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Nominal Vgs :

1.1 V

Terminal Position :

Dual

REACH SVHC :

Unknown

Turn On Delay Time :

24 ns

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Mount :

Surface Mount

Vgs (Max) :

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds :

3595pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

40A

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

20 mJ

Power Dissipation-Max :

3.7W Ta 52W Tc

Number of Terminations :

5

Fall Time (Typ) :

20 ns