SISA14BDN-T1-GE3

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Mfr.Part #
SISA14BDN-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK? 1212-8
Datasheet
Download
Description
N-CHANNEL 30-V (D-S) MOSFET POWE
Stock
29,109
In Stock :
29,109

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Package Type :
PowerPAK 1212-8PT
Product Category :
MOSFET
Configuration :
Single
Packaging :
Cut Tape
Package / Case :
PowerPAK? 1212-8
Operating Temperature :
-55°C ~ 150°C (TJ)
Minimum Operating Temperature :
- 55 C
Channel Type :
N
Qualification :
-
RoHS :
Details
Rds On (Max) @ Id, Vgs :
5.38mOhm @ 10A, 10V
Product Type :
MOSFET
Rise Time :
5 ns, 30 ns
Manufacturer :
Vishay
Vgs (Max) :
+20V, -16V
Mounting Type :
Surface Mount
Mounting Style :
SMD/SMT
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Transistor Polarity :
N-Channel
Supplier Device Package :
PowerPAK? 1212-8
Pin Count :
8
Drain to Source Voltage (Vdss) :
30 V
FET Feature :
-
Gate Charge (Qg) (Max) @ Vgs :
22 nC @ 10 V
Power Dissipation :
45W
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current Id :
72A
Power Dissipation (Max) :
3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Product Status :
Active
Number of Channels :
1 Channel
Brand :
Vishay / Siliconix
MSL :
MSL 1 - Unlimited
Subcategory :
MOSFETs
Input Capacitance (Ciss) (Max) @ Vds :
917 pF @ 15 V
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
21A (Ta), 72A (Tc)
Channel Mode :
Enhancement
Datasheets
SISA14BDN-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SISA14BDN-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PowerPAK? 1212-8, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Number of Channels:1 Channel, SISA14BDN-T1-GE3 pinout, SISA14BDN-T1-GE3 datasheet PDF, SISA14BDN-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SISA14BDN-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SISA14BDN-T1-GE3


N-Channel Cut Tape 5.38mOhm @ 10A, 10V +20V, -16V 917 pF @ 15 V 22 nC @ 10 V 30 V PowerPAK? 1212-8

SISA14BDN-T1-GE3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 917 pF @ 15 V.Operating this transistor requires a 30 V drain to source voltage (Vdss).

SISA14BDN-T1-GE3 Features


a 30 V drain to source voltage (Vdss)


SISA14BDN-T1-GE3 Applications


There are a lot of Vishay Siliconix
SISA14BDN-T1-GE3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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