SISA18BDN-T1-GE3

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Mfr.Part #
SISA18BDN-T1-GE3
Manufacturer
Vishay
Package / Case
8-PowerWDFN
Datasheet
Download
Description
N-CHANNEL 30 V (D-S) MOSFET POWE
Stock
5,888
In Stock :
5,888

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
Vishay
Mounting Type :
Surface Mount
MSL :
MSL 1 - Unlimited
Product Type :
MOSFET
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Operating Temperature :
-55°C ~ 150°C (TJ)
Brand :
Vishay Semiconductors
Input Capacitance (Ciss) (Max) @ Vds :
680 pF @ 15 V
Pin Count :
8
Qualification :
-
Drain to Source Voltage (Vdss) :
30 V
Packaging :
MouseReel
Series :
TrenchFET? Gen IV
Base Product Number :
SISA18
Power Dissipation :
36.8W
Supplier Device Package :
PowerPAK? 1212-8PT
Current - Continuous Drain (Id) @ 25°C :
18A (Ta), 60A (Tc)
Vgs (Max) :
+20V, -16V
Rds On (Max) @ Id, Vgs :
6.83mOhm @ 10A, 10V
Rise Time :
55 ns
Package Type :
PowerPAK 1212-8PT
Transistor Polarity :
N-Channel
RoHS :
Details
Power Dissipation (Max) :
3.2W (Ta), 36.8W (Tc)
Vgs(th) (Max) @ Id :
2.4V @ 250μA
Continuous Drain Current Id :
60A
Package / Case :
8-PowerWDFN
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
19 nC @ 10 V
Mounting Style :
SMD/SMT
Transistor Type :
1 N-Channel
Package :
Digi-Reel?
Subcategory :
MOSFETs
FET Feature :
-
Product Category :
MOSFET
Channel Type :
N
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Number of Channels :
1 Channel
FET Type :
N-Channel
Channel Mode :
Enhancement
Datasheets
SISA18BDN-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SISA18BDN-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:8-PowerWDFN, Number of Channels:1 Channel, SISA18BDN-T1-GE3 pinout, SISA18BDN-T1-GE3 datasheet PDF, SISA18BDN-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SISA18BDN-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SISA18BDN-T1-GE3


N-Channel MouseReel 6.83mOhm @ 10A, 10V +20V, -16V 680 pF @ 15 V 19 nC @ 10 V 30 V 8-PowerWDFN

SISA18BDN-T1-GE3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 680 pF @ 15 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30 V.

SISA18BDN-T1-GE3 Features


a 30 V drain to source voltage (Vdss)


SISA18BDN-T1-GE3 Applications


There are a lot of Vishay Siliconix
SISA18BDN-T1-GE3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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