SISA14DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

11.25 mJ

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 10A, 10V

Published :

2016

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

80A

Resistance :

5.1mOhm

Mount :

Surface Mount

JESD-30 Code :

S-PDSO-C5

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Terminal Form :

C BEND

Number of Elements :

1

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

240

Terminal Position :

Dual

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Power Dissipation-Max :

3.57W Ta 26.5W Tc

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Package / Case :

PowerPAK® 1212-8

Case Connection :

DRAIN

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

20A

Number of Terminations :

5

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Vgs (Max) :

+20V, -16V

Factory Lead Time :

14 Weeks