SISA24DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Turn-Off Delay Time :

18 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

+20V, -16V

Height :

1.17mm

Input Capacitance (Ciss) (Max) @ Vds :

2650pF @ 10V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Continuous Drain Current (ID) :

38.3A

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Drain to Source Breakdown Voltage :

25V

Series :

TrenchFET® Gen IV

Power Dissipation-Max :

52W Tc

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 15A, 10V

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Power Dissipation :

3.7W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® 1212-8

Current - Continuous Drain (Id) @ 25°C :

60A Tc

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Turn On Delay Time :

12 ns