SISA10DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® 1212-8

Case Connection :

DRAIN

Turn On Delay Time :

20 ns

Power Dissipation :

3.6W

Element Configuration :

Dual

Drain-source On Resistance-Max :

0.0037Ohm

Peak Reflow Temperature (Cel) :

240

Operating Mode :

ENHANCEMENT MODE

Width :

3.4mm

REACH SVHC :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Length :

3.4mm

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

20 ns

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

20 mJ

JESD-30 Code :

S-PDSO-F5

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2425pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Power Dissipation-Max :

3.6W Ta 39W Tc

Height :

1.12mm

FET Type :

N-Channel

Published :

2012

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

27 ns

Number of Elements :

1

Continuous Drain Current (ID) :

30A

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Vgs (Max) :

+20V, -16V

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 10A, 10V

Threshold Voltage :

1.1V