SIR494DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

6.9nF

Number of Channels :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

54 ns

Drain to Source Breakdown Voltage :

12V

Mounting Type :

Surface Mount

Published :

2016

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Power Dissipation-Max :

6.25W Ta 104W Tc

Rise Time :

60ns

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

42 ns

Supplier Device Package :

PowerPAK® SO-8

Package / Case :

PowerPAK® SO-8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.2mOhm @ 20A, 10V

Mount :

Surface Mount

Height :

1.04mm

Weight :

506.605978mg

Continuous Drain Current (ID) :

60A

Width :

5.89mm

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 6V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Drain to Source Resistance :

1MOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Length :

4.9mm

Fall Time (Typ) :

54 ns

Rds On Max :

1.2 mΩ

Drain to Source Voltage (Vdss) :

12V