SIR414DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

1 V

Weight :

506.605978mg

Terminal Position :

Dual

Number of Elements :

1

Pin Count :

8

Length :

4.9mm

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

13 ns

Mounting Type :

Surface Mount

Turn On Delay Time :

33 ns

Pulsed Drain Current-Max (IDM) :

70A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

JESD-30 Code :

R-PDSO-F5

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

50A

REACH SVHC :

Unknown

Series :

TrenchFET®

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Width :

5.89mm

DS Breakdown Voltage-Min :

40V

Turn-Off Delay Time :

42 ns

Drain to Source Voltage (Vdss) :

40V

ECCN Code :

EAR99

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

Power Dissipation :

5.4W

Turn On Time-Max (ton) :

77ns

Number of Terminations :

5

FET Type :

N-Channel

Height :

1.04mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

22ns

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 20V

Resistance :

2.8MOhm

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 20A, 10V

Turn Off Time-Max (toff) :

90ns

Drain Current-Max (Abs) (ID) :

33A

Radiation Hardening :

No

Power Dissipation-Max :

5.4W Ta 83W Tc

Number of Pins :

8

Lead Free :

Lead Free

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Published :

2012

Terminal Form :

Flat

Package / Case :

PowerPAK® SO-8

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V