SIR403EDP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

4620pF @ 15V

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

240

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Published :

2016

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 13A, 10V

Gate to Source Voltage (Vgs) :

25V

Series :

TrenchFET®

Power Dissipation :

5W

Terminal Form :

C BEND

Contact Plating :

Tin

Mount :

Surface Mount

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

40A

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

60A

JESD-30 Code :

R-PDSO-C5

Drain-source On Resistance-Max :

0.0065ohm

Number of Elements :

1

Case Connection :

DRAIN

Radiation Hardening :

No

Vgs (Max) :

±25V

Package / Case :

PowerPAK® SO-8

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Power Dissipation-Max :

5W Ta 56.8W Tc

Terminal Position :

Dual

Pbfree Code :

yes