SIR408DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 20A, 10V

Power Dissipation-Max :

4.8W Ta 44.6W Tc

Fall Time (Typ) :

11 ns

Turn On Delay Time :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Channels :

1

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

21.5A

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

C BEND

Radiation Hardening :

No

JESD-609 Code :

e3

Number of Elements :

1

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

70A

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

25V

Published :

2009

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

506.605978mg

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

30 ns

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerPAK® SO-8

DS Breakdown Voltage-Min :

25V

Rise Time :

28ns

Drain-source On Resistance-Max :

0.0063Ohm

Current - Continuous Drain (Id) @ 25°C :

50A Tc

JESD-30 Code :

R-XDSO-C8

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

50A

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Pbfree Code :

yes

Pin Count :

8

Number of Terminations :

8