SIR402DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

FET Type :

N-Channel

Terminal Position :

Dual

Series :

TrenchFET®

Continuous Drain Current (ID) :

35A

Current - Continuous Drain (Id) @ 25°C :

35A Tc

DS Breakdown Voltage-Min :

30V

Rise Time :

20ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

4.2W

Turn On Delay Time :

25 ns

Pulsed Drain Current-Max (IDM) :

70A

Transistor Application :

SWITCHING

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

20.7A

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Published :

2016

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-XDSO-C5

Element Configuration :

Single

Number of Pins :

8

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Length :

4.9mm

Height :

1.04mm

Number of Elements :

1

Width :

5.89mm

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 15V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

C BEND

Rds On (Max) @ Id, Vgs :

6m Ω @ 20A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Fall Time (Typ) :

15 ns

Power Dissipation-Max :

4.2W Ta 36W Tc

Pin Count :

8

Weight :

506.605978mg

Turn-Off Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

6mOhm

Case Connection :

DRAIN

Package / Case :

PowerPAK® SO-8

Number of Terminations :

5