SIR418DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

40A

Mounting Type :

Surface Mount

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

70A

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

2.4 V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Drain-source On Resistance-Max :

0.005ohm

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Drain Current-Max (Abs) (ID) :

23.5A

Fall Time (Typ) :

12 ns

JESD-609 Code :

e3

Published :

2009

Package / Case :

PowerPAK® SO-8

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

Weight :

506.605978mg

Terminal Form :

C BEND

Number of Terminations :

5

JESD-30 Code :

R-PDSO-C5

Pin Count :

8

Number of Pins :

8

Power Dissipation :

5W

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

73ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Turn-Off Delay Time :

32 ns

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

45 mJ

Power Dissipation-Max :

39W Tc

Number of Channels :

1

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

2.4V

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

REACH SVHC :

Unknown

Turn On Delay Time :

19 ns

ECCN Code :

EAR99