SIR412DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Weight :

506.605978mg

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

20A Tc

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-C5

Power Dissipation-Max :

3.9W Ta 15.6W Tc

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Rise Time :

13ns

Pin Count :

8

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

50A

Power Dissipation :

3.9W

Fall Time (Typ) :

10 ns

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

12m Ω @ 10A, 10V

Number of Channels :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Published :

2014

JESD-609 Code :

e3

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V

Element Configuration :

Single

Turn On Delay Time :

13 ns

Number of Terminations :

5

Continuous Drain Current (ID) :

20A

Package / Case :

PowerPAK® SO-8

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Terminal Form :

C BEND

Drain to Source Breakdown Voltage :

25V

Mount :

Surface Mount

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

13 ns