SIR422DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

506.605978mg

Series :

TrenchFET®

Turn-Off Delay Time :

28 ns

Transistor Element Material :

SILICON

Length :

5.969mm

Number of Channels :

1

Max Junction Temperature (Tj) :

150°C

Terminal Finish :

Matte Tin (Sn)

Height :

1.12mm

Power Dissipation :

5W

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

2.5V

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

45 mJ

Width :

5.0038mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Drain Current-Max (Abs) (ID) :

20.5A

Turn On Delay Time :

19 ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

70A

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

40A

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

11 ns

Pin Count :

8

Radiation Hardening :

No

Power Dissipation-Max :

5W Ta 34.7W Tc

Element Configuration :

Single

Package / Case :

PowerPAK® SO-8

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 20A, 10V

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Resistance :

6.6mOhm

Mount :

Surface Mount, Through Hole

Number of Terminations :

5

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Case Connection :

DRAIN

Number of Pins :

8

FET Type :

N-Channel

Terminal Form :

C BEND

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

40V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-XDSO-C5

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1785pF @ 20V

Rise Time :

84ns

Nominal Vgs :

1.2 V

Lead Free :

Lead Free

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Elements :

1