SIR426DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Rise Time :

15ns

Pbfree Code :

yes

Lead Free :

Lead Free

Weight :

506.605978mg

Power Dissipation :

41.7W

RoHS Status :

ROHS3 Compliant

Manufacturer Package Identifier :

S17-0173-Single

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

20 mJ

Height :

1.12mm

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Resistance :

12.5mOhm

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 15A, 10V

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

18 ns

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

40V

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Radiation Hardening :

No

JESD-30 Code :

R-XDSO-C5

Published :

2013

Pin Count :

8

Turn On Delay Time :

9 ns

Nominal Vgs :

2.5 V

Number of Pins :

8

Power Dissipation-Max :

4.8W Ta 41.7W Tc

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

30A

Number of Elements :

1

Terminal Form :

C BEND

Vgs (Max) :

±20V

Element Configuration :

Single

Threshold Voltage :

2.5V

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 20V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Number of Terminations :

5

Series :

TrenchFET®

Fall Time (Typ) :

10 ns

Package / Case :

PowerPAK® SO-8

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Pulsed Drain Current-Max (IDM) :

70A