SIR484DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Weight :

506.605978mg

Rds On (Max) @ Id, Vgs :

8.3m Ω @ 17.2A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Factory Lead Time :

15 Weeks

Element Configuration :

Single

Lead Free :

Lead Free

Package / Case :

PowerPAK® SO-8

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Published :

2014

Avalanche Energy Rating (Eas) :

24 mJ

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5.89mm

Height :

1.04mm

Resistance :

8.3mOhm

Rise Time :

12ns

Drain to Source Breakdown Voltage :

20V

Continuous Drain Current (ID) :

20A

Terminal Form :

C BEND

Mounting Type :

Surface Mount

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 10V

Transistor Element Material :

SILICON

Number of Elements :

1

Number of Terminations :

5

ECCN Code :

EAR99

Power Dissipation-Max :

3.9W Ta 29.8W Tc

Terminal Position :

Dual

FET Type :

N-Channel

Turn-Off Delay Time :

17 ns

JESD-30 Code :

R-XDSO-C5

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

50A

Fall Time (Typ) :

10 ns

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Length :

4.9mm

Vgs (Max) :

±20V

Pbfree Code :

yes

Turn On Delay Time :

15 ns

Operating Mode :

ENHANCEMENT MODE