SIR482DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

5W Ta 27.7W Tc

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Package / Case :

PowerPAK® SO-8

Element Configuration :

Single

Published :

2016

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Pin Count :

8

Weight :

506.605978mg

Mount :

Surface Mount

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 20A, 10V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-C5

Input Capacitance (Ciss) (Max) @ Vds :

1575pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Terminal Position :

Dual

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

70A

Avalanche Energy Rating (Eas) :

20 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

35A

Number of Channels :

1

FET Type :

N-Channel

Series :

TrenchFET®

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Vgs (Max) :

±20V

Terminal Form :

C BEND

Case Connection :

DRAIN

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0075Ohm

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40