SIR470DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 20A, 10V

Length :

4.9mm

Turn-Off Delay Time :

85 ns

Mounting Type :

Surface Mount

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

6.25W

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Power Dissipation-Max :

6.25W Ta 104W Tc

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Height :

1.04mm

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Radiation Hardening :

No

Resistance :

2.3MOhm

Fall Time (Typ) :

39 ns

Number of Pins :

8

Turn Off Time-Max (toff) :

225ns

Number of Terminations :

5

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Factory Lead Time :

14 Weeks

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Package / Case :

PowerPAK® SO-8

Continuous Drain Current (ID) :

60A

Input Capacitance (Ciss) (Max) @ Vds :

5660pF @ 20V

Packaging :

Tape and Reel (TR)

Width :

5.89mm

REACH SVHC :

Unknown

Series :

TrenchFET®

Nominal Vgs :

2.5 V

Mount :

Surface Mount

Weight :

506.605978mg

Rise Time :

31ns

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Threshold Voltage :

1V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-F5

Turn On Delay Time :

40 ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Published :

2015

Terminal Form :

Flat

Case Connection :

DRAIN

Lead Free :

Lead Free